NC7SZ08L6X

Marking：GG；Package：SIP6；TinyLogic UHS Two-Input AND Gate

Description TheNC7SZ08isasingletwo−inputANDgatefromonsemi’s Ultra−HighSpeed(UHS)seriesofTinyLogic.Thedeviceisfabricated withadvancedCMOStechnologytoachieveultra−highspeedwith highoutputdrivewhilemaintaininglowstaticpowerdissipationover abroadVCCoperating

P4SMAJ300A

Marking：GG；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

PESD2CANFD27U-T

Marking：GG；Package：SOT23；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic packagedesignedtoprotecttwoautomotiveIn-vehiclenetworkbuslinesfromthedamagecaused byElectroStaticdischarge(ESD)andothertransients. 2.Featuresandbenefits •Reve

PESD2CANFD27UT-Q

Marking：GG；Package：SOT23；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package,designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecaused byElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits •Rev

PZU8.2

Marking：GG；Package：SC-90；Zener diodes in a SOD323F package

1.Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatleadSurfaceMounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:550mW •Toleranceseries:B:approximately5;B1,B2,B3:sequential,approximately2 •Sma

SMF13CA

Marking：GG；Package：SOD-123F；TRANSIENT VOLTAGE SUPPRESSOR

SMFxxxXXSeriestransientvoltagesuppressorsare excellentovervoltageprotectivedevices. TheSeriesisdesignedspecificallytoprotectsensitive electronicequipmentfromvoltagetransientsinducedby lightningandothertransientvoltageevents. Features ■Excellentclampingcapabilit

XC7SET32GW

Marking：gG；Package：SOT353-1；2-input OR gate

1.Generaldescription XC7SET32isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputORfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •TTLinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds2

BAR63-02W

Marking：GG；Package：SCD80；Silicon PIN Diodes

BAR63-02W

Marking：GG；Package：SCD80；Silicon PIN Diodes

BAR63-02W

Marking：GG；Package：SCD80；Silicon PIN Diodes