P Channel Power MOSFET

文件：115.69 Kbytes 页数：1 Pages

GSG

劲力半导体

P Channel Power MOSFET

Gunter

劲力半导体

P-CHANNEL POWER MOSFET

FEATURES • P–CHANNEL POWER MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES

文件：25.63 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-st

文件：147.44 Kbytes 页数：7 Pages

IRF

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星