首页 >GET929>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AMPLIFIERTRANSISTOR GENERALPURPOSETRANSISTOR NPNSILICON | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
IntegratedCircuitGeneralPurpose,HighCurrent,NPNTransistorArray Description: TheNTE929isaversatilearrayoffivehigh–current(to100mA)NPNtransistorsonacommonmonolithicsubstrate.Inaddition,twoofthesetransistors(Q1andQ2)arematchedatlowcurrents(i.e.1mA)forapplicationsinwhichoffsetparametersareofspecialimportance. Independe | NTE NTE Electronics | NTE | ||
ShortcircuitProtectorCircuitBuilt-inPhotocouplerSuitableforInverter-DrivingMOS-FET/IGBT ❈TÜV(VDE0884)approvedtypeisalsoavailableasanoption. Features 1.Built-inIGBTshortcircuitprotectorcircuit 2.Built-indirectdrivecircuitforIGBTdrive(Peakoutputcurrent...IO1P,IO2P:MAX.0.4A) 3.Highspeedresponse(tPLH,tPHL:MAX.0.5µs) 4.Highisol | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
thickfilmresistorsforhighvoltage | KOA KOA SPEER ELECTRONICS, INC. | KOA | ||
ReceiverModule | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
DualP-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualP-Channel30V(D-S)MOSFET FEATURES •TrenchFET®GenIIIpowerMOSFET •ThermallyenhancedPowerPAK® SC-70package -Smallfootprintarea -Lowon-resistance •100Rgtested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchandbatterymana | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualP-Channel30V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
BIOPOLARTRANSISTORCHIPS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 |
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