首页 >GET2369>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSILICONTRANSISTOR APPLICATIONS Thisdeviceisdesignedforhighspeedsaturated switchingatcollectorcurrentsofmAto100mA | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
GENERALPURPOSETRANSISTOR | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
30VP-ChannelEnhancement-ModeMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHMBT2369isdesignedforgeneralpurposeswitchingandamplifierapplications. Features •LowCollectorSaturationVoltage •HighspeedswitchingTransistor | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHPH2369isdesignedforgeneralpurposeswitchingandamplifierapplications. Features •LowCollectorSaturationVoltage •HighspeedswitchingTransistor | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHPH2369isdesignedforgeneralpurposeswitchingandamplifierapplications. Features •LowCollectorSaturationVoltage •HighspeedswitchingTransistor | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHPN2369Aisdesignedforgeneralpurposeswitchingandamplifierapplications. Features •LowCollectorSaturationVoltage •HighSpeedSwitchingTransistor | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-7.6A(VGS=±20V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-7.6A(VGS=±20V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
EPITAXIALPLANARNPNTRANSISTOR(HIGHSPEEDSWITCHING) HIGHSPEEDSWITCHINGAPPLICATION. FEATURES •HighFrequencyCharacteristics :fT=500MHz(Min.)(VCE=10V,f=100MHz,IC=10mA). •ExcellentSwitchingCharacteristics. | KECKEC CORPORATION KEC株式会社 | KEC |
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