N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE630 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial applications at power dissipation level to approximately 50 watts. The thr

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GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ETL

亚历电子

5.2Ø x 20 mm

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CONQUER

功得电子

S C HO T T K Y B A R R I E R R E C T I F I E R S R E V E R S E VO LTAG E 7 0 V T O 1 5 0 V, C U R R E N T 2 0 A

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ETL

亚历电子

Gripping Material

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3M