N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE02N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. Features * Dynami

文件：248.6 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：252.05 Kbytes 页数：5 Pages

ETL

亚历电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：74.96 Kbytes 页数：6 Pages

HSMC

华昕