GDSSF2307规格书批发采购固锝电子GOOD-ARK-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GDSSF2307	文件：248.58 Kbytes Page：4 Pages	High Power and current handing capability 文件：248.58 Kbytes 页数：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
GDSSF2307_15	文件：248.58 Kbytes Page：4 Pages	GENERAL FEATURES 文件：248.58 Kbytes 页数：4 Pages	GOOD-ARK 固锝电子	GOOD-ARK
NTE2307	文件：20.03 Kbytes Page：2 Pages	Silicon NPN Transistor High Gain Power Amp Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability 文件：20.03 Kbytes 页数：2 Pages	NTE	NTE
RF2307	文件：59.54 Kbytes Page：4 Pages	GENERAL PURPOSE AMPLIFIER Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica 文件：59.54 Kbytes 页数：4 Pages	RFMD 威讯联合	RFMD
RF2307PCBA	文件：59.54 Kbytes Page：4 Pages	GENERAL PURPOSE AMPLIFIER Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica 文件：59.54 Kbytes 页数：4 Pages	RFMD 威讯联合	RFMD

更多GDSSF2307供应商更新时间2026-4-1 15:07:00