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P25Q32H-WXH-KR-X	文件：3.63843 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32H-WXH-KT-X	文件：3.63843 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32H-WXH-KW-X	文件：3.63843 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32H-WXH-KY-X	文件：3.63843 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-IR-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-IT-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-IW-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-IY-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-KR-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-KT-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-KW-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-NXH-KY-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-IR-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-IT-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-IW-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-IY-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-KR-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-KT-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q32L-QVH-KW-X	文件：3.56236 Mbytes Page：97 Pages	UltraLowPower,32M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q32LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA

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产品属性

产品编号：
GD25Q32CZIGY
制造商：
GigaDevice Semiconductor (HK) Limited
类别：
集成电路（IC） > 存储器
包装：
管件
存储器类型：
非易失
存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
32Mb（4M x 8）
存储器接口：
SPI - 四 I/O
写周期时间 - 字，页：
50µs，2.4ms
电压 - 供电：
2.7V ~ 3.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
24-TBGA
供应商器件封装：
24-TFBGA（6x8）
描述：
IC FLASH 32MBIT SPI/QUAD 24TFBGA

供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	GD25Q32CZIGY	GigaDevice Semiconductor (HK)	21+	-	56200	一级代理/放心采购	询价
深圳市冠亿通科技有限公司	GD25Q32CZIGY	GigaDevice	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市力拓辉电子有限公司	GD25Q32CZIGY	GD	21+	VSON008X2030	200	全新原装鄙视假货15118075546	询价
深圳市明嘉莱科技有限公司	GD25Q32CZIGY	GD/兆易创新	20+	SMD	880000	明嘉莱只做原装正品现货	询价
深圳市创新迹电子有限公司	GD25Q32CZIGY	GigaDevice Semiconductor (HK)	23+	-	7300	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	GD25Q32CZIGY	GigaDevice Semiconductor (HK)	23+	-	7300	专注配单,只做原装进口现货	询价
深圳市粤骏腾电子科技有限公司	GD25Q32CZJG	GD/兆易创新	23+	TFBGA-24ball	80000	原装现货	询价
深圳市英瑞芯科技有限公司	GD25Q32CZJG	GD	22+	TFBGA-24ball	8900	英瑞芯只做原装正品!!!	询价
深圳市瑞卓芯科技有限公司	GD25Q32CZJG	GD/兆易创新	22+	TFBGA-24ball	18000	原装正品	询价
深圳市铨博晟科技有限公司	GD25Q32CZJG	GigaDevice	22+	TFBGA-24ball	80000	兆易全线/只有原装/价格优势/全线可订	询价

更多GD25Q32CZIGY供应商更新时间2024-6-19 10:02:00

产品属性

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