GD25Q21CTIGR规格书库存现货兆易创新第4页-114ic电子网

首页 >GD25Q21CTIGR>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
P25Q21H-SUH-IW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SUH-IY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SUH-KR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SUH-KT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SUH-KW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SUH-KY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-IR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-IT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-IW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-IY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-KR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-KT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-KW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-SVH-KY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-IR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-IT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-IW	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-IY	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-KR	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q21H-UXH-KT	文件：2.83247 Mbytes Page：77 Pages	UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q21H11H06HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA

<<<1 2 345 6 7 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亚泰盈科电子有限公司	GD25Q256ABIG	GD		TFBGA24	36800	提供BOM表配单只做原装货值得信赖	询价
深圳市惊羽科技有限公司	GD25Q256AYIG	GIGADEV	24+25+/26+27+	WSO8	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市宇集芯电子有限公司	GD25Q256C	GD	24+	SOP-8/SOP16	90000	一级代理商进口原装现货、价格合理	询价
深圳市凌旭科技有限公司	GD25Q256CFIG	GD	2016+	SOP8	10000	只做原装,假一罚十,公司优势内存型号!	询价
深圳市科恒伟业电子有限公司	GD25Q256CFIG	GD	2018+	SOP	6528	承若只做进口原装正品假一赔十!	询价
千层芯半导体(深圳)有限公司	GD25Q256CFIG	GD	2018+	SOP-16	90000	专营GigaDevice原装正品可售样品	询价
深圳市华斯顿科技有限公司	GD25Q256CFIG	GD兆易	22+23+	SOP-8	20578	绝对原装正品全新进口深圳现货	询价
中天科工半导体（深圳）有限公司	GD25Q256CFIG	GIGADEVICE	20+	SOP16	19570	原装优势主营型号-可开原型号增税票	询价
深圳市纳艾斯科技有限公司	GD25Q256CFIG	GD	2020+	SOP16	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市粤骏腾电子科技有限公司	GD25Q256CFIG	GD/兆易创新	23+	SOP-16	95000	原装现货	询价

更多GD25Q21CTIGR供应商更新时间2024-5-20 17:40:00

相关规格书

相关库存