首页 >GD25Q21BUIGR>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

P25Q21LA-SUH-IT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-IW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-IY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-KR

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-KT

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-KW

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21LA-SUH-KY

UltraLowPower,2M/1M/512K-bit

2Description The P25Q21L/11L/06LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-KR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-KT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-NXH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-SSH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-SSH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-SSH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q21U-SSH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

供应商型号品牌批号封装库存备注价格
GIGADEV
23+
USON8
8860
受权代理!全新原装现货特价热卖!
询价
GIGADEV
20+原装正品
USON8
6000
大量现货,免费发样。
询价
GIGADEV
1613+
USON8
3000
原装库存有订单来谈优势
询价
GD/兆易创新
21+
USON-8
9800
只做原装正品假一赔十!正规渠道订货!
询价
GIGADEV
2022+
USON8
7084
原厂授权代理 价格绝对优势
询价
GD/兆易创新
23+
USON8
6000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
GD/兆易创新
2021+
USON8
9000
原装现货,随时欢迎询价
询价
GIGADEV
17+
USON8
60000
保证进口原装可开17%增值税发票
询价
GIGADEV
2020+
USON8
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
GIGADEV
20+
USON8
11520
特价全新原装公司现货
询价
更多GD25Q21BUIGR供应商 更新时间2024-5-21 14:38:00