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P25Q20L-UWH-IW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UWH-KR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UWH-KT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UWH-KW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-IR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-IT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-IW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-KR

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-KT

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20L-UXH-KW

UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20U-NXH-IR

UltraLowPower,4M/2M/1M/512K-bit

2Description The P25Q40U/20U/10U/05UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20U-NXH-IT

UltraLowPower,4M/2M/1M/512K-bit

2Description The P25Q40U/20U/10U/05UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20U-NXH-IW

UltraLowPower,4M/2M/1M/512K-bit

2Description The P25Q40U/20U/10U/05UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

P25Q20U-NXH-KR

UltraLowPower,4M/2M/1M/512K-bit

2Description The P25Q40U/20U/10U/05UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉普冉半导体(上海)有限公司

供应商型号品牌批号封装库存备注价格
GigaDevice
22+
TSSOP-8 173mil
80000
兆易全线/只有原装/价格优势/全线可订
询价
GIGADEV
24+25+/26+27+
TSSOP-8
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
GD/兆易创新
23+
DIP-8300mil
80000
原装现货
询价
GD/兆易创新
22+
SOP-8208mil
50000
只做正品原装,假一罚十,欢迎咨询
询价
GD/兆易创新
23+
SOP-8208mil
80000
全新原装现货库存
询价
GD/兆易创新
22+
SOP-8208mil
2000
原厂原包装。假一罚十。可开13%增值税发票。
询价
GD/兆易创新
22+
SOP-8208mil
18000
原装正品
询价
GD/兆易创新
21+
SOP-8208mil
880000
明嘉莱只做原装正品现货
询价
GD/兆易创新
2312+
SOP-8208mil
6860
优势代理渠道,原装现货,可全系列订货
询价
GD/兆易创新
2122+
SOP-8208mil
23800
全新原装正品现货,优势渠道可含税,假一赔十
询价
更多GD25Q20COJG供应商 更新时间2024-1-17 12:20:00