首页 >GD25Q16CTEGR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,16M-bit 2Description The P25Q16LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,with | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA |
产品属性
- 产品编号：
GD25Q16CTEGR
- 制造商：
GigaDevice Semiconductor (HK) Limited
- 类别：
集成电路（IC） > 存储器
- 包装：
管件
- 存储器类型：
非易失
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
16Mb（2M x 8）
- 存储器接口：
SPI - 四 I/O
- 写周期时间 - 字，页：
50µs，2.4ms
- 电压 - 供电：
2.7V ~ 3.6V
- 工作温度：
-40°C ~ 125°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
8-SOIC（0.154"，3.90mm 宽）
- 供应商器件封装：
8-SOP
- 描述：
IC FLASH 16MBIT SPI/QUAD 8SOP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) |
21+ |
8-SOP |
56200 |
一级代理/放心采购 |
询价 | ||
GD/兆易创新 |
23+ |
8-SOIC |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
GigaDevice Semiconductor (HK) |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
询价 | ||
GigaDevice |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
GigaDevice Semiconductor (HK) |
2022+ |
8-SOP |
7300 |
原装现货 |
询价 | ||
GD |
22+ |
SOP-8 |
3000 |
原厂原装,价格优势!13246658303 |
询价 | ||
GD/兆易创新 |
22+ |
SOP-8 |
3156 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
GIGADEVICE |
22+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
GIGADEVICE |
2125 |
NA |
2846 |
现货!就到京北通宇商城 |
询价 | ||
GIGADEVICE |
23+ |
NA |
2846 |
现货!就到京北通宇商城 |
询价 |
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