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P25Q128H-SUH-IY

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-SUH-KR

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-SUH-KT

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-SUH-KW

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-SUH-KY

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-TBH-IR

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-TBH-IT

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-TBH-IW

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-TBH-IY

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

P25Q128H-TBH-KR

UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半导体(上海)股份有限公司

产品属性

  • 产品编号:

    GD25Q128EWIGR

  • 制造商:

    GigaDevice Semiconductor (HK) Limited

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    128Mb(16M x 8)

  • 存储器接口:

    SPI - 四 I/O

  • 写周期时间 - 字,页:

    70µs,2.4ms

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-WDFN 裸露焊盘

  • 供应商器件封装:

    8-WSON(5x6)

  • 描述:

    128MBIT NOR FLASH /3.3V /WSON8 6

供应商型号品牌批号封装库存备注价格
GD(兆易创新)
2023+
WSON-8(6x5)
4550
全新原装正品
询价
GD
24+
SOP-8
3000
原装原厂代理 可免费送样品
询价
GIGADEVICE
23+
WSON-8
1300
原装正品,实单请联系
询价
GD(兆易创新)
24+
WSON-8(6x5)
8853
原厂可订货,技术支持,直接渠道。可签保供合同
询价
GigaDevice
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
GD(兆易创新)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
GD
23+
USON8
50000
全新原装正品现货,支持订货
询价
GD/兆易创新
22+
SOP-8
500000
原厂渠道/找正品元器件就找宏桥达/实报实货/诚信第一/
询价
GD
2021+
USON8
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
GigaDevice
22+
SOP-8
95000
兆易全线/只有原装/价格优势/全线可订
询价
更多GD25Q128EWIGR供应商 更新时间2025-7-12 9:03:00