N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

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STMICROELECTRONICS

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丝印：GD10NC60KD；Package：DPAK；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

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N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

ST

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10 A, 600 V fast IGBT

文件：1.27233 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

文件：410.77 Kbytes 页数：17 Pages

STMICROELECTRONICS

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