Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode

文件：760.14 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体