首页 >GCIXF1002EDT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1.0AGeneralPurposeRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
1.0ASURFACEMOUNTGLASSPASSIVATEDDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
PLASTICSILICONRECTIFIER FEATURES ▪Forsurfacemountedapplications ▪Lowprofilepackage ▪GlassPassivatedChipJuntion ▪Idealforautomatedplacement ▪LeadfreeincomplywithEURoHS2011/65/EUdirectives | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司 | SAMYANG | ||
STANDARDRECTIFIER Features ·Forsurfacemountedapplications ·Glasspassivatedjunction ·Lowprofilepackage ·Idealforautomatedplacement ·Hightemperaturesolderingguaranteed:260℃/10 seconds,atterminals | DAESAN Daesan Electronics Corp. | DAESAN | ||
1.0ASURFACEMOUNTGLASSPASSIVATEDSTANDARDDIODE LowProfile1.08mmMax.CaseHeight GlassPassivatedDieConstruction LowForwardVoltageDrop SurgeOverloadRatingto30APeak IdeallySuitedforAutomaticAssembly PlasticMaterial–ULRecognitionFlammability Classification94V-0 | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
SURFACEGENERALPURPOSERECTIFIERS | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
1.1-1.7GHzLowNoiseAmplifier | HBH HBH Microwave GmbH | HBH | ||
SiliconPChannelMOSFETSeriesPowerSwitching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPChannelMOSFETSeriesPowerSwitching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
详细参数
- 型号：
GCIXF1002EDT
- 制造商：
Intel
- 功能描述：
Ethernet CTLR Single Chip 1000Mbps 3.3V 304-Pin ESBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
04+ |
5 |
全新原装!优势库存热卖中! |
询价 | |||
INTEL |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
询价 | ||
INTEL |
24+ |
BGA304 |
500 |
原装现货假一罚十 |
询价 | ||
INTEL |
22+ |
BGA |
2000 |
进口原装!现货库存 |
询价 | ||
INTEL |
BGAQFP |
6688 |
15 |
现货库存 |
询价 | ||
INTEL |
14/15+ |
BGAQFP |
329 |
普通 |
询价 | ||
INTEL |
2023+ |
BGA |
50000 |
原装现货 |
询价 | ||
CORTINA |
23+ |
BGA |
9920 |
原装正品，支持实单 |
询价 | ||
Inphi Corporation |
22+ |
672BGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
Inphi Corporation |
21+ |
672BGA |
13880 |
公司只售原装,支持实单 |
询价 |
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