Schottky Barrier Diode

文件：54.92 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

NIEC

Schottky Barrier Diode

FEATURES * Similar to TO-220AC Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：56.24 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：52.07 Kbytes 页数：6 Pages

NIEC

100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management app

文件：197.89 Kbytes 页数：7 Pages

Zetex