GC9986分立半导体产品的二极管-射频规格书PDF中文资料
| 厂商型号 |
GC9986 |
| 参数属性 | GC9986 封装/外壳为4-SMD，扁平引线；包装为卷带（TR）；类别为分立半导体产品的二极管-射频；产品描述：SI SCHOTTKY NON HERMETIC BEAM LE |
| 功能描述 | Schottky Barrier Diodes TM Ultra High Drive Monolithic |
| 封装外壳 | 4-SMD，扁平引线 |
| 文件大小 |
164.79 Kbytes |
| 页面数量 |
2 页 |
| 生产厂商 | MICROSEMI |
| 中文名称 | 美高森美 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2026-2-1 16:20:00 |
| 人工找货 | GC9986价格和库存，欢迎联系客服免费人工找货 |
GC9986规格书详情
DESCRIPTION
Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications.
KEY FEATURES
◾ Monolithic Design for Lowest Parasitics and Matched Junction Characteristics
◾ Low Noise Figure
◾ Suitable for Applications to 26.5 GHz
◾ Excellent Conversion Loss
◾ Available High and Ultra-High Barrier Heights
◾ Can be Supplied as Monolithic Devices for Hybrid Applications or as Packaged Devices
◾ RoHS Compliant1
APPLICATIONS/BENEFITS
◾ RF Mixers
◾ Double Balanced Mixers
◾ High Speed Switching
◾ Motion Detection
◾ Phase Detectors
产品属性
- 产品编号：
GC9986-8JR
- 制造商：
Microchip Technology
- 类别：
分立半导体产品 > 二极管 - 射频
- 包装：
卷带（TR）
- 二极管类型：
肖特基 - 1 个桥接
- 电压 - 峰值反向（最大值）：
5V
- 不同 Vr、F 时电容：
0.15pF @ 0V，1MHz
- 不同 If、F 时电阻：
15 欧姆 @ 10mA，100MHz
- 工作温度：
-65°C ~ 150°C
- 封装/外壳：
4-SMD，扁平引线
- 描述：
SI SCHOTTKY NON HERMETIC BEAM LE
