GC84040-00数据手册电容器的硅电容器规格书PDF

描述 Description

The GC84000 series are silicon chip capacitors and utilize silicon nitride as the dielectric layer. These capacitors are preferred over MOS devices because of their improved reliability and ruggedness. In addition, they exhibit higher capacitance per unit area, resulting in smaller size. Because MNS capacitors are high Q devices, they have superior insertion loss characteristics for high frequency applications as compared with ceramic chip capacitors. They are used from UHF through Ku-bands and exhibit less than 0.1 dB insertion loss over this range. The working voltage rating is 100 VDC (140 VDC, typical). Special devices with breakdown ratings to 300 VDC and custom sizes are available. Contact factory for details.

简介

GC84040-00属于电容器的硅电容器。由制造生产的GC84040-00硅电容器硅电容器和薄膜电容器是使用半导体器件制造中更常用的工具、方法和材料制造的特殊器件。因此，所提供的极高精度和控制能力可生产出具有卓越参数稳定性且近乎理想的电容器，但参数值范围相对有限，并且与最直接的竞争对手陶瓷器件相比，成本要高得多。