GC3M0032120D说明书PDF资料批发采购国晶微-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
GC3M0032120D	文件：300 bytes Page：1 Pages	SiC 碳化硅 MOSFET	GWOKSEMI 国晶微	GWOKSEMI
C3M0032120D	文件：793.43 Kbytes Page：11 Pages	Silicon Carbide Power MOSFET C3MTM MOSFET Technology 文件：793.43 Kbytes 页数：11 Pages	Cree 科锐	Cree
C3M0032120D	文件：792.56 Kbytes Page：11 Pages	Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H 文件：792.56 Kbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
C3M0032120K	文件：1.98226 Mbytes Page：12 Pages	Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery 文件：1.98226 Mbytes 页数：12 Pages	WOLFSPEED	WOLFSPEED

更多GC3M0032120D供应商更新时间2025-10-31 11:06:00