首页 >GC374>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
Octal3-StateNon-InvertingDFlip-Flop Octal3-StateNon-InvertingDFlip-Flop High−PerformanceSilicon−GateCMOS TheMC74HC374AisidenticalinpinouttotheLS374.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLSTTLoutputs. Datameetingthesetuptimeisclock | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | Intersil Intersil Corporation | Intersil |
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