P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：299.81 Kbytes 页数：4 Pages

ETL

亚历电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：289.18 Kbytes 页数：4 Pages

GTM

勤益投资控股

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

文件：20.03 Kbytes 页数：2 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：59.54 Kbytes 页数：4 Pages

RFMD

威讯联合