650V/10A Trehch Field Stop IGBT

Features  650V 10A,VCE(sat)(typ.) = 1.8 V@10A  Trench and Field Stop IGBT Technology.  High efficiency for motor control .  Fast switching and short tail current.  Positive VCE (sat) temperature coefficient.  10μs short circuit capability Benefits  Home appliances,motor drives.  R

文件：8.94193 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

650V/10A Trench and Field Stop IGBT

Features:  650V 10A,VCE(sat)(typ.) = 1.8 V@10A  High ruggedness performance  10μs short circuit capability  Positive VCE (sat) temperature coefficient  High efficiency for motor control  Excellent current sharing in parallel operation  RoHS compliant Applications:  Home appliances

文件：6.84222 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

650V/10A Trehch Field Stop IGBT

Features  650V 10A,VCE(sat)(typ.) = 1.8 V@10A  Trench and Field Stop IGBT Technology.  High efficiency for motor control .  Fast switching and short tail current.  Positive VCE (sat) temperature coefficient.  10μs short circuit capability Benefits  Home appliances,motor drives.  R

文件：8.57512 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

N-Channel Power MOSFET (650V,10A)

文件：177.49 Kbytes 页数：6 Pages

HSMC

华昕