GAL18V10-15LJ数据手册Lattice中文资料规格书

描述 Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.

特性 Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY
—7.5 ns Maximum Propagation Delay
—Fmax = 111 MHz
—5.5 ns Maximum from Clock Input to Data Output
—TTL Compatible 16 mA Outputs
—UltraMOS® Advanced CMOS Technology
•LOW POWER CMOS
—75 mA Typical Icc
•ACTIVE PULL-UPS ON ALL PINS
•E2CELL TECHNOLOGY
—Reconfigurable Logic
—Reprogrammable Cells
—100% Tested/100% Yields
—High Speed Electrical Erasure (<100ms)
—20 Year Data Retention
•TEN OUTPUT LOGIC MACROCELLS
—Uses Standard 22V10 Macrocell Architecture
—Maximum Flexibility for Complex Logic Designs
•PRELOAD AND POWER-ON RESET OF REGISTERS
—100% Functional Testability
•APPLICATIONS INCLUDE:
—DMA Control
—State Machine Control
—High Speed Graphics Processing
—Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION