GAL18V10-15LJ中文资料莱迪思数据手册PDF规格书

描述 Description

The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar counterparts. The E2 technology offers high speed (

特性 Features

• HIGH PERFORMANCE E2CMOS®TECHNOLOGY

— 7.5 ns Maximum Propagation Delay

— Fmax = 111 MHz

— 5.5 ns Maximum from Clock Input to Data Output

— TTL Compatible 16 mA Outputs

— UltraMOS® Advanced CMOS Technology

• LOW POWER CMOS

— 75 mA Typical Icc

• ACTIVE PULL-UPS ON ALL PINS

• E2CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100 Tested/100 Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

• TEN OUTPUT LOGIC MACROCELLS

— Uses Standard 22V10 Macrocell Architecture

— Maximum Flexibility for Complex Logic Designs

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100 Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION