GAL16V8D-7LPI中文资料莱迪思数据手册PDF规格书

描述 Description

The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (

特性 Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY

—3.5 ns Maximum Propagation Delay

—Fmax = 250 MHz

—3.0 ns Maximum from Clock Input to Data Output

—UltraMOS® Advanced CMOS Technology

•50 to 75 REDUCTION IN POWER FROM BIPOLAR

—75mA Typ Icc on Low Power Device

—45mA Typ Icc on Quarter Power Device

•ACTIVE PULL-UPS ON ALL PINS

•E2CELL TECHNOLOGY

—Reconfigurable Logic

—Reprogrammable Cells

—100 Tested/100 Yields

—High Speed Electrical Erasure (<100ms)

—20 Year Data Retention

•EIGHT OUTPUT LOGIC MACROCELLS

—Maximum Flexibility for Complex Logic Designs

—Programmable Output Polarity

—Also Emulates 20-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility

•PRELOAD AND POWER-ON RESET OF ALL REGISTERS

—100 Functional Testability

•APPLICATIONS INCLUDE:

—DMA Control

—State Machine Control

—High Speed Graphics Processing

—Standard Logic Speed Upgrade

•ELECTRONIC SIGNATURE FOR IDENTIFICATION