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GAL16V8D-25LP

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LP

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LP

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic?

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPI

AllDevicesDiscontinued

Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

GAL16V8D-25LPN

HighPerformanceE2CMOSPLD

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

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