Features

•HIGH PERFORMANCE E2CMOS®TECHNOLOGY

—3.5 ns Maximum Propagation Delay

—Fmax = 250 MHz

—3.0 ns Maximum from Clock Input to Data Output

—UltraMOS®

Advanced CMOS Technology

•50 to 75 REDUCTION IN POWER FROM BIPOLAR

—75mA Typ Icc on Low Power Device

—45mA Typ Icc on Quarter Power Device

•ACTIVE PULL-UPS ON ALL PINS

•E2CELL TECHNOLOGY

—Reconfigurable Logic

—Reprogrammable Cells

—100 Tested/100 Yields

—High Speed Electrical Erasure (<100ms)

—20 Year Data Retention

•EIGHT OUTPUT LOGIC MACROCELLS

—Maximum Flexibility for Complex Logic Designs

—Programmable Output Polarity

—Also Emulates 20-pin PAL®

Devices with Full

Function/Fuse Map/Parametric Compatibility

•PRELOAD AND POWER-ON RESET OF ALL REGISTERS

—100 Functional Testability

•APPLICATIONS INCLUDE:

—DMA Control

—State Machine Control

—High Speed Graphics Processing

—Standard Logic Speed Upgrade

•ELECTRONIC SIGNATURE FOR IDENTIFICATION

•LEAD-FREE PACKAGE OPTIONS

GAL16V8D-10LJNI属于集成电路（IC） > CPLD（复杂可编程逻辑器件）。莱迪思半导体制造生产的GAL16V8D-10LJNICPLD（复杂可编程逻辑器件）CPLD 是用于执行逻辑运算和信息处理的用户可配置集成电路产品；与 PLD 或 PAL 器件相比，这些器件具有更高级别的功能（即更多的逻辑门），但低于 FPGA。CPLD 通常包含非易失性配置存储器，支持直接在器件上存储和保留用户所需的配置，并在器件断电时仍可保留这些信息。