| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR?
| NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR?
| NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR? MEDIUMSPEEDSWITCHINGRESISTORBUILT-INTYPENPNTRANSISTOR | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SCRs Nanosecond Switching, Planar DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SCRs Nanosecond Switching, Planar DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HALF-BRIDGE IGBT INT-A-PAK Features •Generation4IGBTTechnology •Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz •VeryLowConductionLosses •Industrystandardpackage Benefits •Increasedoperatingefficiency •Directmountingtoheatsink •Performanceoptimi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT Features •Generation4IGBTTechnology •Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz •VeryLowConductionLosses •Industrystandardpackage Benefits •Increasedoperatingefficiency •Directmountingtoheatsink •Performanceoptimi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A FEATURES •Generation4IGBTtechnology •Standard:OptimizedforhardswitchingspeedDCto1kHz •Verylowconductionlosses •Industrystandardpackage •ULapprovedfileE78996 •ComplianttoRoHSdirective2002/95/EC •Designedandqualifiedforindustriallevel BENEFITS •Increased | VishayVishay Siliconix 威世科技 | Vishay | ||
High Side Switch Chopper Module Ultra-Fast Speed IGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystandardpackage •ULapproved •Generation4IGBTtechnology B | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES •Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技 | Vishay | ||
INSULATED GATE BIPOLAR TRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2,500voltAC) •Verylowinternalinductance(5nHtyp.) •Industrystanda | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES •Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz •Lowestconductionlossesavailable •Fullyisolatedpackage(2500VAC) •Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
一级代理 |
23+ |
N/A |
54000 |
一级代理放心采购 |
询价 | ||
GeneSiC |
1935+ |
N/A |
55 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
GeneSiC |
22+ |
NA |
55 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
一级代理 |
23+ |
N/A |
67000 |
一级代理放心采购 |
询价 | ||
GeneSiC Semiconductor |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
GeneSiC Semiconductor |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 | ||
GENESIC |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
GENESIC |
23+ |
TO-247AB |
10000 |
公司只做原装正品 |
询价 | ||
GeneSiC Semiconductor |
2022+ |
TO-247-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
GeneSiC |
22+ |
TO-247AB |
25000 |
只做原装进口现货,专注配单 |
询价 |
相关规格书
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