NPN EPITAXIAL TRANSISTOR

Description The G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

文件：174.98 Kbytes 页数：3 Pages

GTM

勤益投资控股

The G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation

文件：178.67 Kbytes 页数：3 Pages

ETL

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PNP EPITAXIAL TRANSISTOR

Description\nThe G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

GTM

勤益投资控股

Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA

文件：245.7 Kbytes 页数：3 Pages

GSME

桂微

NPN EPITAXIAL TRANSISTOR

文件：237.11 Kbytes 页数：3 Pages

GTM

勤益投资控股

N P N E P I T A X I A L T R A N S I S T O R

文件：240.88 Kbytes 页数：3 Pages

ETL

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