丝印：G900N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The G900N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：914.14 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：618.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G900P15A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch lDC/DC converters

文件：759.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：919.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G900P15；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：951.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：951.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：951.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

3.3 V 300MA LOW DROPOUT REGULATOR

[GMT] General Description The G901 positive 3.3V voltage regulator features the ability to source 300mA of output current with a dropout voltage of typically 0.45V. A low quiescent current is provided. The typical quiescent current is 0.6mA. Familiar regulator features such as over temp

文件：155.86 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

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PNP EPITAXIAL TRANSISTOR

Description The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.

文件：163.28 Kbytes 页数：2 Pages

GTM

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