丝印：G60KN30；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G60KN30IA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.05833 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G60KN30I uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

TO-264

FAIRCHILD

仙童半导体

上传：深圳市毅创腾电子科技有限公司

SOT-23-5

GMT/致新

上传：深圳市明嘉莱科技有限公司

SOT143

GMT

致新科技

上传：深圳市旺财半导体有限公司