G4PC50WPBF中文资料INSULATED GATE BIPOLAR TRANSISTOR数据手册Infineon规格书

特性 Features

• Designed expressly for Switch-Mode Power Supply and PFC
   (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
   tighter parameters distribution, exceptional reliability
• Lead-Free
Benefits
• Lower switching losses allow more cost-effective operation
   than power MOSFETs up to 150 kHz (\"hard switched\" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these
   an excellent option for resonant mode switching as well (up to 300 kHz)

应用 Application

• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
   tighter parameters distribution, exceptional reliability
• Lead-Free
Benefits
• Lower switching losses allow more cost-effective operation
   than power MOSFETs up to 150 kHz (\"hard switched\" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these
   an excellent option for resonant mode switching as well (up to 300 kHz)