G3J14

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

G3J14

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

SMG3J14

P-ChannelEnhancementModePowerMos.FET

SMG3J14

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J14T

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J14T

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J14T

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSII)

PowerManagementSwitch DC-DCConverters •Suitableforhigh-densitymountingduetocompactpackage •LowonResistance:Ron=145mΩ(max)(@VGS=−4.5V) :Ron=85mΩ(max)(@VGS=−10V) •High-speedswitching