G27N120BN技术资料参数供应代理FAIRCHILD-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
G27N120BN	文件：178.54 Kbytes Page：8 Pages	72A, 1200V, NPT Series N-Channel IGBT 文件：178.54 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
G27N120BN	文件：300 bytes Page：1 Pages	72A, 1200V, NPT Series N-Channel IGBT	ONSEMI 安森美半导体	ONSEMI
HGTG27N120BN	文件：396.11 Kbytes Page：4 Pages	IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.7V@IC=34A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries 文件：396.11 Kbytes 页数：4 Pages	ISC 无锡固电	ISC
HGTG27N120BN	文件：82.96 Kbytes Page：7 Pages	72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip 文件：82.96 Kbytes 页数：7 Pages	INTERSIL	INTERSIL
HGTG27N120BN	文件：178.54 Kbytes Page：8 Pages	72A, 1200V, NPT Series N-Channel IGBT 文件：178.54 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多G27N120BN供应商更新时间2026-2-5 15:35:00