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HGTG24N60D1	文件：32.35 Kbytes Page：4 Pages	24A,600VN-ChannelIGBT Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymode	Intersil Intersil Corporation	Intersil
HGTG24N60D1D	文件：35.6 Kbytes Page：5 Pages	24A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymode	Intersil Intersil Corporation	Intersil

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HGTG24N60D1

文件：32.35 Kbytes

Page：4 Pages

24A,600VN-ChannelIGBT

Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymode

Intersil

Intersil Corporation

Intersil

HGTG24N60D1D

文件：35.6 Kbytes

Page：5 Pages

24A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode

Intersil

Intersil Corporation

Intersil

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