24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description\nThe IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only modera • 24A, 600V\n• Typical Fall Time <500ns\n• With Anti-Parallel Diode\n• tRR < 60ns;

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24A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

文件：32.35 Kbytes 页数：4 Pages

INTERSIL

24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

文件：35.6 Kbytes 页数：5 Pages

INTERSIL

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