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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION · Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliabl

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无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE)

HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.

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EPITAXIAL PLANAR PNP TRANSISTOR

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