high insulated module

文件：475.03 Kbytes 页数：9 Pages

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Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 6500 V - IC nom = 500 A / ICRM = 1000 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with CTI >

文件：485.55 Kbytes 页数：17 Pages

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IGBT-Module

文件：527.68 Kbytes 页数：12 Pages

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英飞凌

high insulated module

文件：474.64 Kbytes 页数：9 Pages

Infineon

英飞凌