FZ1200R45HL3数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

High efficient  4500 V IHM-B 190 mm single switch IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your industry applications

特性 Features

• High DC Stability
• High Short Circuit Capability, Self Limiting Short Circuit Current
• High Dynamic Robustness
• Low VCEsat with positive Temperature Coefficient
• High Creepage and Clearance Distances

优势:
• High power density for compact inverter designs
• Standardized housing

简介

FZ1200R45HL3属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FZ1200R45HL3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。