FZ1000R33HL3数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

IHV B 3300 V, 1000 A 130 mm single-switch IGBT Module with TRENCHSTOP™ IGBT 3, low switching losses and Emitter Controlled diode - The experienced solution for traction and industry applications.
Also available as fast switching device: FZ1000R33HE3

特性 Features

• High DC stability
• High short circuit capability
• Self limiting short circuit current
• Low switching losses
• Unbeatable robustness
• Tvj op = 150°C
• Low VCEsat with positive temperature coefficient
• AlSiC base plate for increased thermal cycling capability
• Package with CTI > 600
• Isolated base plate

优势:
• Standardized housing

简介

FZ1000R33HL3属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FZ1000R33HL3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。