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IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTAC

Suntac Electronic Corp.

IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

IRF730

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF730

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCIFirst Components International

戈采戈采企业股份有限公司

IRF730

HighPowerFactor/LowTHD

IRF

International Rectifier

详细参数

  • 型号:

    FXO-HC730R

  • 功能描述:

    Low Cost, Low Jitter, Fast Delivery...1.888.XPRESSO HCMOS 7x5mm 3.3V Oscillator

供应商型号品牌批号封装库存备注价格
FOX
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FXO
2447
SMD-6
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FOX
23+
4-SMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FoxElectronics
23+
2013+
7300
专注配单,只做原装进口现货
询价
FoxElectronics
23+
2013+
7300
专注配单,只做原装进口现货
询价
更多FXO-HC730R供应商 更新时间2025-7-25 17:55:00