Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features · Composite type composed of two low ON-resistance N-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting. · The FX606 is formed with two chips, each being equivalent to the 2SK1470, placed in

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SANYO

三洋

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in P600 package ● 6 ampere operation at TA=60 ¢J with no thermal runaway ● Exce

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PANJIT

強茂

FAST SWITCHING RECOVERY RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● High current capability Fast switching for high efficiency ● The plastic meterial carries U/L recognition 94V-O ● Exceeds environmental standards of MIL-S-19500/228

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PANJIT

強茂

GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE 50 to 800 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficiency. • Bot

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PANJIT

強茂