Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Low-voltage drive.

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SANYO

三洋

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

DARLINGTON ARRAYS

The L601, L602, L603 and L604 are high voltage, high current darlington arrays each containing eight open collector darlington pairs with common emitters. Each channel is rated at 400 mA and can with stand peak currents of 500 mA. Suppression diodes are included for inductive load driving and the

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STMICROELECTRONICS

意法半导体

TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

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PHI

PHI

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting

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NEC

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