FV4N150中文资料意法半导体数据手册PDF规格书

描述 Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

■ 100 avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF and TO-220FH plastic packages

■ Creepage distance path is 5.4 mm (typ.) for TO-3PF

■ Creepage distance path is > 4 mm for TO-220FH

Application

■ Switching applications