Load Switching Applications

Features • Low ON resistance. • 2.5V drive. • Mounting height 1.1mm.

文件：197.02 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：780.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体