FTP14N50C

N-Channel Enhancement

InPowerProductLines

JCS14N50FT

N-CHANNELMOSFET

JCS14N50FT-O-F-N-B

N-CHANNELMOSFET

MTW14N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTW14N50E

N?묬hannelPowerMOSFET

MTW14N50E

TMOSPOWERFET14AMPERES500VOLTSRDS(on)=0.40OHM

ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandPWMmo

PHW14N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=14A RDS(ON)≤0.4Ω GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurpos

SIHG14N50D

DSeriesPowerMOSFET

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

SIHG14N50D

DSeriesPowerMOSFET

SIHP14N50D

DSeriesPowerMOSFET