FTK5N60I技术资料参数库存现货FS第2页-114ic电子网

首页 >FTK5N60I>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
5N60L	文件：151.71 Kbytes Page：6 Pages	4.5Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC5N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplication	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
5N60P	文件：2.03879 Mbytes Page：8 Pages	N-CHANNELPOWERMOSFET	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司	SUNMATE
5N60T	文件：2.03879 Mbytes Page：8 Pages	N-CHANNELPOWERMOSFET	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司	SUNMATE
5N60Z	文件：199.23 Kbytes Page：6 Pages	5A,600VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
AOT5N60	文件：164.77 Kbytes Page：5 Pages	600V,5AN-ChannelMOSFET	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT5N60	文件：137.69 Kbytes Page：5 Pages	600V,5AN-ChannelMOSFET	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT5N60	文件：356.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BLV5N60	文件：396.41 Kbytes Page：6 Pages	N-channelEnhancementModePowerMOSFET	ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司	ESTEK
BRD5N60	文件：804.5 Kbytes Page：6 Pages	N-CHANNELMOSFETinaTO-252PlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
BRF5N60	文件：802.72 Kbytes Page：6 Pages	N-CHANNELMOSFETinaTO-220FPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
FCD5N60	文件：947.92 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCD5N60	文件：353.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCD5N60TF	文件：947.92 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCD5N60TM	文件：947.92 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCD5N60TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCD5N60TM-WS	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCU5N60	文件：947.92 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description SuperFET™is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCU5N60	文件：364.66 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.6A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCU5N60TU	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N60NZ	文件：334.68 Kbytes Page：8 Pages	N-ChannelUniFETIIMOSFET600V,4.0A,2Ohm	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

<<<123 4 5 6 7 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	FTK603NP	SILI	24+25+/26+27+	SOP-8.贴片	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳兆威电子有限公司	FTK6401	FS	23+	SOT-23	45000	原装正品现货	询价
贸泽芯城（深圳）电子科技有限公司	FTK6601S	FIRSTSILICON	21+ROHS	SOP-8	69000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市河锋鑫科技有限公司	FTK6909T	FS	2022+	SOT-223	32500	原厂代理终端免费提供样品	询价
深圳市创新迹电子有限公司	FTK6909T	FS	2022+	SOT-223	30000	进口原装现货供应,原装假一罚十	询价
深圳市安富世纪电子有限公司	FTK6909T	FS	20+	SOT-223	32500	现货很近!原厂很远!只做原装	询价
深圳市鼎欣微电子有限公司	FTK7002	FS	23+		12000		询价
深圳市明嘉莱科技有限公司	FTK7002	FS	18+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	FTK7002E	FIRSTSILI		ROHS	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市粤骏腾电子科技有限公司	FTK7002EN	SXSEMI	23+	SOT523	900000	原装进口特价	询价

更多FTK5N60I供应商更新时间2024-6-17 16:16:00

相关规格书

相关库存