IRFP3415

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FullyAvalancheRated •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤42mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRFP3415PBF

AdvancedProcessTechnology

IRFP3415PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

JMTL3415K

JMTL3415KAEC

JMTL3415KC

KI3415PDFN

P-ChannelMOSFET

KO3415

P-ChannelEnhancementModeFieldEffectTransistor

KO3415A

P-ChannelMOSFET

■Features ●VDS(V)=-20V ●ID=-5A(VGS=-4.5V) ●RDS(ON)

KSD3415MA

Dedicated-Recycle

Description TheKSD3SeriesDigi-Timerisacosteffectiveapproachfor ON/OFFrecyclingapplications.Theontimeisequaltothe offtime.AnadjustmentoftheRTwillchangethetimedelays ofbothonandofftimes.Thisseriesisdesignedforgeneral purposecommercialandindustrialappl