KTD1898

PowerTransistor

FEATURES ●HighVCEO,VCEO=80V. ●HighIC,IC=1A(DC). ●GoodHFELinearity. ●LowVCE(sat). ●Complementthe2SB1260. APPLICATIONS ●NPNsilicontransistor.

KTD1898

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallFlatPackage ●GeneralPurposeApplication

KTD1898

PowerTransistor

FEATURES HighVCEO,VCEO=80V. HighIC,IC=1A(DC). GoodHFELinearity. LowVCE(sat). Complementthe2SB1260. APPLICATIONS NPNsilicontransistor.

KTD1898-G

NPNTransistors

■Features ●SmallFlatPackage ●GeneralPurposeApplication

KTD1898-G

NPNTransistors

KTD1898-GR

EPITAXIALPLANARNPNTRANSISTOR

KTD1898-GR

NPNPlasticEncapsulatedTransistor

KTD1898-GR

NPNSiliconPowerTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •HighVCEO,VCEO=80V •HighIC,IC=1.0A(DC) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

KTD1898-GR

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •1W(MountedonCeramicSubstrate). •SmallFlatPackage. •ComplementarytoKTB1260.

KTD1898-GR

1A,100VNPNPlasticEncapsulatedTransistor

FEATURES ●SmallFlatPackage ●GeneralPurposeApplication